Green Energy Core is the first generation of SiC Schottky diodes, which are packaged in TO-247-2 pins, which can easily replace the current general-purpose Si diodes. The new package features an extended 8.7 mm creepage and clearance for increased safety in highly polluted environments. Combined with Si IGBTs or SJ MOSFETs, such as in Vienna rectification stages or PFC boost circuits used in three-phase conversion systems, SiC Schottky diodes have a 1% increase in efficiency compared to Si diodes. This enables a significant increase in output power of 40% and more for PFC and DC-DC circuits. In addition to negligible switching losses (a feature of SiC Schottky), Gen 1 SiC products also feature best-in-class forward voltage (VF), lowest VF over temperature, and highest surge current capability. This family of products enables market-leading efficiency and higher system reliability at an attractive cost.
Green Energy Core is the first generation of SiC Schottky diodes, which are packaged in TO-247-2 pins, which can easily replace the current general-purpose Si diodes. The new package features an extended 8.7 mm creepage and clearance for increased safety in highly polluted environments. Combined with Si IGBTs or SJ MOSFETs, such as in Vienna rectification stages or PFC boost circuits used in three-phase conversion systems, SiC Schottky diodes have a 1% increase in efficiency compared to Si diodes. This enables a significant increase in output power of 40% and more for PFC and DC-DC circuits. In addition to negligible switching losses (a feature of SiC Schottky), Gen 1 SiC products also feature best-in-class forward voltage (VF), lowest VF over temperature, and highest surge current capability. This family of products enables market-leading efficiency and higher system reliability at an attractive cost.
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