With its rich market experience, Green Energy Xinchuang can provide industry-leading high-reliability silicon carbide performance. The characteristic difference between SiC material and silicon material limits the fabrication of 100V-150V practical silicon unipolar diodes (Schottky diodes), with relatively high on-resistance and leakage current. In silicon carbide materials, Schottky diodes can achieve higher breakdown voltages. Green Energy's SiC product range covers Schottky diodes from 600V and 650V to 1200V.

With its rich market experience, Green Energy Xinchuang can provide industry-leading high-reliability silicon carbide performance. The characteristic difference between SiC material and silicon material limits the fabrication of 100V-150V practical silicon unipolar diodes (Schottky diodes), with relatively high on-resistance and leakage current. In silicon carbide materials, Schottky diodes can achieve higher breakdown voltages. Green Energy's SiC product range covers Schottky diodes from 600V and 650V to 1200V.

Green Energy Core is the first generation of SiC Schottky diodes, which are packaged in TO-247-2 pins, which can easily replace the current general-purpose Si diodes. The new package features an extended 8.7 mm creepage and clearance for increased safety in highly polluted environments. Combined with Si IGBTs or SJ MOSFETs, such as in Vienna rectification stages or PFC boost circuits used in three-phase conversion systems, SiC Schottky diodes have a 1% increase in efficiency compared to Si diodes. This enables a significant increase in output power of 40% and more for PFC and DC-DC circuits. In addition to negligible switching losses (a feature of SiC Schottky), Gen 1 SiC products also feature best-in-class forward voltage (VF), lowest VF over temperature, and highest surge current capability. This family of products enables market-leading efficiency and higher system reliability at an attractive cost.