Low-voltage power devices are new materials developed based on silicon materials. Including silicon material on the insulating layer, germanium silicon material, porous silicon, microcrystalline silicon and other compound semiconductor materials using sil

Ultrafast and high-frequency power device materials are the main development direction of the power semiconductor industry. They are used to make power devices, which can significantly improve the utilization rate of electric energy

Gallium nitride is an inorganic substance, the chemical formula GaN, is a compound of nitrogen and gallium, and is a direct bandgap semiconductor.