with Si IGBTs or SJ MOSFETs, such as in Vienna rectification stages or PFC boost circuits used in three-phase conversion systems, SiC Schottky diodes have a 1% increase in efficiency compared to Si diodes. This enables a significant increase in output power of 40% and more for PFC and DC-DC circuits. In addition to negligible switching losses (a feature of SiC Schottky), Gen 1 SiC products also feature best-in-class forward voltage (VF), lowest VF over temperature, and highest surge current capability. This family of products enables market-leading efficiency and higher system reliability at an attractive cost.
with Si IGBTs or SJ MOSFETs, such as in Vienna rectification stages or PFC boost circuits used in three-phase conversion systems, SiC Schottky diodes have a 1% increase in efficiency compared to Si diodes. This enables a significant increase in output power of 40% and more for PFC and DC-DC circuits. In addition to negligible switching losses (a feature of SiC Schottky), Gen 1 SiC products also feature best-in-class forward voltage (VF), lowest VF over temperature, and highest surge current capability. This family of products enables market-leading efficiency and higher system reliability at an attractive cost.
